Polymeric material that, when irradiated, undergoes a marked change in
solubility in a given solvent or is ablated.
Notes:
- A resist polymer under irradiation either forms patterns directly or undergoes chemical reactions leading to pattern
formation after subsequent processing.
- A resist material that is optimized for use with ultraviolet or visible light, an electron beam, an ion beam, or X-rays is called a photoresist, electron-beam resist, ion-beam resist, or X-ray resist, respectively.
- In a positive-tone resist, also called a positive resist, the material in the irradiated
area not covered by a mask is removed, which results in an image with a pattern identical
with that on the mask. In a negative-tone resist, also called a negative resist, the
non-irradiated area is subsequently removed, which results in an image with a pattern
that is the complement of that on the mask.
Source:
PAC, 2004, 76, 889
(Definitions of terms relating to reactions of polymers and to functional polymeric
materials (IUPAC Recommendations 2003))
on page 903
Cite as:
IUPAC. Compendium of Chemical Terminology, 2nd ed. (the "Gold Book"). Compiled by
A. D. McNaught and A. Wilkinson. Blackwell Scientific Publications, Oxford (1997).
XML on-line corrected version: http://goldbook.iupac.org (2006-) created by M. Nic,
J. Jirat, B. Kosata; updates compiled by A. Jenkins. ISBN 0-9678550-9-8.
https://doi.org/10.1351/goldbook.
