The distribution of potential in the space charge region of a
semiconductor results in a change in the electron energy levels with distance from the
interface. This is usually described as '
bending of the energy bands'. Thus the bands are bent, upwards if

and downwards if

, where

is the free
charge density. When

the condition of flat bands is met, provided no
surface states are present.
Source:
PAC, 1986, 58, 437
(Interphases in systems of conducting phases (Recommendations 1985))
on page 443
Cite as:
IUPAC. Compendium of Chemical Terminology, 2nd ed. (the "Gold Book"). Compiled by
A. D. McNaught and A. Wilkinson. Blackwell Scientific Publications, Oxford (1997).
XML on-line corrected version: http://goldbook.iupac.org (2006-) created by M. Nic,
J. Jirat, B. Kosata; updates compiled by A. Jenkins. ISBN 0-9678550-9-8.
https://doi.org/10.1351/goldbook.